Mid-frequency deposition of a-C:H films using five different precursors

Vacuum

Volumn 85, Issue 4, 2010, Pages 510-513

  Peter, S ^a   Gunther M ^a   Hauschild, D ^a   Grambole, D ^b   Richter, F ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

a C:H; Diamond like carbon; PECVD; Precursor; Pulsed discharge

Indexed keywords

A-C:H; DIAMOND-LIKE CARBON; PECVD; PRECURSOR; PULSED DISCHARGE;

ACETYLENE; AMORPHOUS CARBON; AMORPHOUS FILMS; BUTENES; DEPOSITION; DEPOSITION RATES; FILM GROWTH; HARDNESS; HYDROGEN; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TOLUENE;

CARBON FILMS;

EID: 78649654910     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.10.006     Document Type: Conference Paper

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