Erratum: High-performance field effect transistors from solution processed carbon nanotubes (ACS Nano (2010) 4 (6659-6664) (DOI: 10.1021/nn1020743));High-performance field effect transistors from solution processed carbon nanotubes

ACS Nano

Volumn 4, Issue 11, 2010, Pages 6659-6664

  Wang, Huiliang ^a   Luo, Jun ^a   Robertson, Alex ^a   Ito, Yasuhiro ^a   Yan, Wenjing ^a   Lang, Volker ^a   Zaka, Mujtaba ^a   Schäffel, Franziska ^a   Rümmeli, Mark H ^b,c   Briggs, G Andrew D ^a   Warner, Jamie H ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b IFW DRESDEN   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Carbon nanotube; High performance; Solution processed; TEM; Transistor

Indexed keywords

AMORPHOUS CARBON; CARBON NANOTUBES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LASER ABLATION; SURFACE DEFECTS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; YARN;

1 ,2-DICHLOROETHANES; CATALYST PARTICLES; DEVICE PERFORMANCE; FIELD EFFECT TRANSISTOR (FETS); FREE FROM SURFACE; HIGH-PERFORMANCE; HIGH-TEMPERATURE VACUUM ANNEALING; SOLUTION-PROCESSED;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 78649585321     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200779g     Document Type: Erratum

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