Irradiation-induced defect clustering and amorphization in silicon carbide

Journal of Materials Research

Volumn 25, Issue 12, 2010, Pages 2349-2353

  Weber, William J ^a,b   Gao, Fei ^c  

^a University of Tennessee   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX RELATIONSHIPS; DEFECT CLUSTERING; DOSE DEPENDENCY; ELASTIC INSTABILITIES; EXPERIMENTAL APPROACHES; IRRADIATION-INDUCED DEFECTS; LOCAL ENERGY; SOLID-STATE AMORPHIZATION; SYSTEM ENERGY;

AMORPHIZATION; CLUSTER ANALYSIS; COMPUTER SIMULATION; SILICON CARBIDE;

DEFECTS;

EID: 78649518923     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2010.0292     Document Type: Article

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