Underlying reverse current mechanisms in a-Si:H p+-i-n+ solar cell and compact SPICE modeling

Journal of Non-Crystalline Solids

Volumn 354, Issue 31, 2008, Pages 3780-3784

  Murthy, Rambhatla V R ^a   Dutta, Viresh ^b  

^a PerkinElmer Optoelectronics Canada   (Canada)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Silicon; Solar cells

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEFECT STRUCTURES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SPICE;

DEFECT STATES; REVERSE BIAS ANNEALING (RBA) TREATMENT; THERMAL GENERATION; VOLTAGE CONTROLLED CURRENT SOURCES (VCCS);

SILICON SOLAR CELLS;

EID: 45049085432     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2008.03.041     Document Type: Article

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