The influence of the amorphous silicon deposition temperature on the efficiency of the ITO/A-Si:H/C-Si heterojunction (HJ) solar cells and properties of interfaces

Thin Solid Films

Volumn 403-404, Issue , 2002, Pages 359-362

  Ulyashin, A G ^a   Job, R ^a   Scherff, M ^a   Gao, Meizhen ^a   Fahrner, W R ^a   Lyebyedyev, D ^b   Roos, N ^b   Scheer, H C ^b  

^a UNIVERSITY OF HAGEN   (Germany)

^b UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

Heterojunction (HJ) solar cells; Interfaces; Raman; SIMS; X ray photoelectron spectroscopy (XPS)

Indexed keywords

AMORPHOUS SILICON; CHARGE CARRIERS; DEPOSITION; DIELECTRIC FILMS; HETEROJUNCTIONS; INTERFACES (MATERIALS); RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES; SILANES; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROJUNCTION (HJ) SOLAR CELLS;

SILICON SOLAR CELLS;

EID: 0036467720     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01569-3     Document Type: Conference Paper

References (10)