Role of i layer deposition parameters on the Voc and FF of an a-Si:H solar cell deposited by PECVD at 27.13 MHz

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 250-254

  Schonbachler I ^a   Benagli, S ^a   Bucher, C ^a   Shah, A ^a   Ballutaud, J ^b   Buchel A ^c  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b EPFL   (Switzerland)

^c Displays Division   (Liechtenstein)

Author keywords

Degradation; Ellipsometry; FTIR; PECVD; Porosity

Indexed keywords

DEGRADATION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; PROFILOMETRY; SILICON COMPOUNDS; THERMAL EFFECTS; THIN FILM TRANSISTORS;

CELL DEGRADATION; LIGHT SOAKING;

SILICON SOLAR CELLS;

EID: 17644434316     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.051     Document Type: Conference Paper

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