High and balanced hole and electron mobilities from ambipolar thin-film transistors based on nitrogen-containing oligoacences

Journal of the American Chemical Society

Volumn 132, Issue 46, 2010, Pages 16349-16351

  Liu, Yi Yang ^a   Song, Cheng Li ^a   Zeng, Wei Jing ^a   Zhou, Kai Ge ^a   Shi, Zi Fa ^a   Ma, Chong Bo ^a   Yang, Feng ^a   Zhang, Hao Li ^a   Gong, Xiong ^b  

^a LANZHOU UNIVERSITY   (China)

^b The University of Akron   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AMBIPOLAR FET; NEW OPPORTUNITIES; NITROGEN ATOM; ORGANIC SEMICONDUCTOR;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; MESFET DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

NITROGEN;

6,13 BIS(TRIISOPROPYLSILYLETHYNYL)ANTHRADIPYRIDINE; 8,9,10,11 TETRAFLUORO 6,13 BIS(TRIISOPROPYLSILYLETHYNYL) 1 AZAPENTACENE; CARBON; HYDROGEN; NITROGEN; OCTADECYLTRIMETHOXYSILANE; ORGANIC COMPOUND; ORGANOSILICON DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; ATOM; ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; CYCLIC POTENTIOMETRY; DENSITY FUNCTIONAL THEORY; DIELS ALDER REACTION; ELECTRON; ELECTRON TRANSPORT; FIELD EFFECT TRANSISTOR; FILM; ROOM TEMPERATURE; SEMICONDUCTOR; SYNTHESIS;

EID: 78649246130     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja107046s     Document Type: Article

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