Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer

Science China Technological Sciences

Volumn 53, Issue 2, 2010, Pages 306-308

  Wang, Jiaxing ^a   Wang, Lai ^a   Zhao, Wei ^a   Zou, Xiang ^a   Luo, Yi ^a  

^a TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY   (China)

Author keywords

Arrhenius formula; InGaN underneath layer (UL); Internal quantum efficiency (IQE); Multiple quantum well (MQW)

Indexed keywords

EFFICIENCY; GALLIUM ALLOYS; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; QUANTUM EFFICIENCY; SEMICONDUCTOR ALLOYS;

ACCUMULATED STRESS; ARRHENIUS FORMULA; EXPERIMENT DATA; INGAN UNDERNEATH LAYER (UL); INTERNAL QUANTUM EFFICIENCY; METAL-ORGANIC VAPOR PHASE EPITAXY; NONRADIATIVE RECOMBINATION CENTERS; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77950819492     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-010-0062-z     Document Type: Article

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