Temperature-dependent electroluminescence intensity in green and blue (In,Ga)N multiple-quantum-well diodes

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 2, 2008, Pages 50-52

  Jimi, H ^a   Inada, T ^a   Fujiwara, K ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; C-PLANE SAPPHIRE; CURRENT LEVELS; EL EFFICIENCY; ELECTROLUMINESCENCE INTENSITY; ELECTRON BLOCKING LAYER; EXTERNAL QUANTUM EFFICIENCY; FREEZE OUT; HOLE INJECTION; INJECTED CARRIERS; INJECTION LEVELS; LOW TEMPERATURES; MULTIPLE QUANTUM WELLS; QUANTUM WELL; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

CORUNDUM; DIODES; ELECTROLUMINESCENCE; GALLIUM; LIGHT EMISSION; QUANTUM WELL LASERS; QUENCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 42149194480     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200701272     Document Type: Article

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