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Volumn , Issue , 2010, Pages 957-960
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Focused ion beam technology and application in failure analysis
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Author keywords
[No Author keywords available]
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Indexed keywords
ANALOG TO DIGITAL CONVERTERS;
BONDING FAILURE;
CIRCUIT MODIFICATION;
CIRCUIT TEST;
DEFECT LOCALIZATIONS;
DIELECTRIC BREAKDOWNS;
EDS ANALYSIS;
ELECTRON-BEAM PROBING;
EMISSION MICROSCOPY;
FIB MILLING;
FOCUSED ION BEAM TECHNOLOGY;
KIRKENDALL EFFECTS;
MASK REPAIR;
METAL LINE;
METALLIZATIONS;
MICRO-CUTTING;
OPERATING PRINCIPLES;
PASSIVATION LAYER;
PASSIVE VOLTAGE CONTRASTS;
POLYSILICON LINES;
PROBE PADS;
SITE-SPECIFIC;
SPECIFIC LOCATION;
SUCCESSFUL CASE;
TRANSMISSION ELECTRON MICROSCOPE;
ALUMINUM;
ANALOG TO DIGITAL CONVERSION;
DEFECTS;
ELECTRIC BREAKDOWN;
ELECTRON BEAMS;
ELECTRONICS PACKAGING;
FAILURE ANALYSIS;
FOCUSED ION BEAMS;
GOLD;
LIQUID CRYSTALS;
LOCATION;
METAL ANALYSIS;
METALS;
MILLING (MACHINING);
PACKAGING;
PASSIVATION;
PHOTOMASKS;
POLYSILICON;
SPECIMEN PREPARATION;
TECHNOLOGY;
TRANSMISSION ELECTRON MICROSCOPY;
VOLTAGE MEASUREMENT;
QUALITY ASSURANCE;
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EID: 78449298775
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ICEPT.2010.5582645 Document Type: Conference Paper |
Times cited : (15)
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References (12)
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