Short-period AlN/GaN p-type superlattices: Hole transport use in p-n junctions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2386-2389

  Simon, John ^a   Cao, Yu ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

AlN GaN; Doping levels; Electrical properties; MBE; P njunctions; Superlattices

Indexed keywords

ALN/GAN; DOPING LEVELS; ELECTRICAL PROPERTY; MBE; P-NJUNCTIONS;

BIPOLAR TRANSISTORS; DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE MOBILITY; OPTICAL INSTRUMENTS; SECONDARY BATTERIES; SEMICONDUCTOR JUNCTIONS; SUPERLATTICES; TRANSPORT PROPERTIES;

ELECTRIC PROPERTIES;

EID: 78449237960     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983868     Document Type: Article

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