Microstructure and field mapping of AlInN-based heterostructures and devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2436-2439

  Zhou, Lin ^a   Cullen, David A ^a   McCartney, Martha R ^a   Leach, Jacob H ^b   Fan, Qian ^b   Morkoç, Hadis ^b   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Virginia Commonwealth University   (United States)

Author keywords

AlInN based heterojunctions; Electron holography; Field effect transistors; TEM

Indexed keywords

A-DENSITY; ALINN-BASED HETEROJUNCTIONS; ALN; ALN LAYERS; ANNEALING TEMPERATURES; ELECTROSTATIC FIELD; ELECTROSTATIC POTENTIALS; FIELD MAPPING; GAN LAYERS; HETEROSTRUCTURES; INDUCED FIELD; LATTICE-MATCHED; MICROSCOPY TECHNIQUE; OFF-AXIS ELECTRON HOLOGRAPHY; SOURCE AND DRAINS; TEM; THREADING DISLOCATION;

CRYSTALS; ELECTRON GAS; ELECTRON HOLOGRAPHY; ELECTRONS; ELECTROSTATICS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; MICROSTRUCTURE; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 78449232721     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983857     Document Type: Article

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