-
1
-
-
33745627020
-
An aluminium nitride lightemitting diode with a wavelength of 210 nanometres
-
May 18
-
Y. Taniyasu, M. Kasu, and T. Makimoto, "An aluminium nitride lightemitting diode with a wavelength of 210 nanometres, " Nature, vol. 441, no. 7091, pp. 325-328, May 18, 2006.
-
(2006)
Nature
, vol.441
, Issue.7091
, pp. 325-328
-
-
Taniyasu, Y.1
Kasu, M.2
Makimoto, T.3
-
2
-
-
34047268327
-
FEM modeling of AlN/diamond surface acoustic waves device
-
Apr
-
L. Le Brizoual and O. Elmazria, "FEM modeling of AlN/diamond surface acoustic waves device, " Diamond Relat. Mater., vol. 16, no. 4-7, pp. 987-990, Apr. 2007.
-
(2007)
Diamond Relat. Mater.
, vol.16
, Issue.4-7
, pp. 987-990
-
-
Le Brizoual, L.1
Elmazria, O.2
-
3
-
-
78349304302
-
-
Ph. D. dissertation, Univ. Nantes, Nantes, France
-
C. Duquenne, "Procédés plasmas pour l'optimisation de matériaux intervenant dans la management thermique et la passivation de composants de puissance hyperfréquences à base de GaN et AlGaN, " Ph. D. dissertation, Univ. Nantes, Nantes, France, 2008.
-
(2008)
Procédés Plasmas pour L'optimisation de Matériaux Intervenant dans la Management Thermique et la Passivation de Composants de Puissance Hyperfréquences À Base de GaN et AlGaN
-
-
Duquenne, C.1
-
4
-
-
54749092168
-
Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films
-
Sep
-
C. Duquenne, P. Y. Tessier, M. P. Besland, B. Angleraud, P. Y. Jouan, R. Aubry, S. Delage, and M. A. Djouadi, "Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films, " J. Appl. Phys., vol. 104, no. 6, p. 063301, Sep. 2008.
-
(2008)
J. Appl. Phys.
, vol.104
, Issue.6
, pp. 063301
-
-
Duquenne, C.1
Tessier, P.Y.2
Besland, M.P.3
Angleraud, B.4
Jouan, P.Y.5
Aubry, R.6
Delage, S.7
Djouadi, M.A.8
-
5
-
-
0001675993
-
Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-highvacuum ion-assisted reactive dc magnetron sputter deposition
-
Jan
-
S. Tungasmita, J. Birch, P. O. Å. Persson, K. Järrendahl, and L. Hultman, "Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-highvacuum ion-assisted reactive dc magnetron sputter deposition, " Appl. Phys. Lett., vol. 76, no. 2, pp. 170-172, Jan. 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, Issue.2
, pp. 170-172
-
-
Tungasmita, S.1
Birch, J.2
Persson, P.O.3
Järrendahl, K.4
Hultman, L.5
-
6
-
-
34249036740
-
Deposition of AlN films by reactive sputtering: Effect of radiofrequency substrate bias
-
Jun. 25
-
B. Abdallah, A. Chala, P.-Y. Jouan, M. P. Besland, and M. A. Djouadi, "Deposition of AlN films by reactive sputtering: Effect of radiofrequency substrate bias, " Thin Solid Films, vol. 515, no. 18, pp. 7105-7108, Jun. 25, 2007.
-
(2007)
Thin Solid Films
, vol.515
, Issue.18
, pp. 7105-7108
-
-
Abdallah, B.1
Chala, A.2
Jouan, P.-Y.3
Besland, M.P.4
Djouadi, M.A.5
-
7
-
-
42649113437
-
Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition
-
DOI 10.1016/j.tsf.2007.09.030, PII S0040609007015829
-
G. Sánchez, A. Wu, P. Tristant, C. Tixier, B. Soulestin, J. Desmaison, and A. Bologna Alles, "Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition, " Thin Solid Films, vol. 516, no. 15, pp. 4868-4875, Jun. 2, 2008. (Pubitemid 351601820)
-
(2008)
Thin Solid Films
, vol.516
, Issue.15
, pp. 4868-4875
-
-
Sanchez, G.1
Wu, A.2
Tristant, P.3
Tixier, C.4
Soulestin, B.5
Desmaison, J.6
Bologna Alles, A.7
-
8
-
-
0000975178
-
A novel pulsed magnetron sputter technique utilizing very high target power densities
-
Dec. 15
-
V. Kouznetsov, K. Macak, J. M. Schneider, U. Helmersson, and I. Petrov, "A novel pulsed magnetron sputter technique utilizing very high target power densities, " Surf. Coat. Technol., vol. 122, no. 2/3, pp. 290-293, Dec. 15, 1999.
-
(1999)
Surf. Coat. Technol.
, vol.122
, Issue.2-3
, pp. 290-293
-
-
Kouznetsov, V.1
Macak, K.2
Schneider, J.M.3
Helmersson, U.4
Petrov, I.5
-
9
-
-
33746937174
-
Ionized physical vapor deposition (IPVD): A review of technology and applications
-
Aug. 14
-
U. Helmersson, M. Lattemann, J. Bohlmark, and A. P. Ehiasarian, "Ionized physical vapor deposition (IPVD): A review of technology and applications, " Thin Solid Films, vol. 513, no. 1/2, pp. 1-24, Aug. 14, 2006.
-
(2006)
Thin Solid Films
, vol.513
, Issue.1-2
, pp. 1-24
-
-
Helmersson, U.1
Lattemann, M.2
Bohlmark, J.3
Ehiasarian, A.P.4
-
10
-
-
78349304357
-
Deposition by magnetron cathodic pulverization in a pulsed mode with preionization
-
4447072.2, WO 2005/090632, Mar. 22
-
M. Ganciu-Petcu, M. Hecq, J.-P. Dauchot, S. Konstantinidis, J. Bretagne, L. De Poucques, and M. Touzeau, "Deposition by magnetron cathodic pulverization in a pulsed mode with preionization, " Eur. Patent Appl., 4447072.2, WO 2005/090632, Mar. 22, 2004.
-
(2004)
Eur. Patent Appl.
-
-
Ganciu-Petcu, M.1
Hecq, M.2
Dauchot, J.-P.3
Konstantinidis, S.4
Bretagne, J.5
De Poucques, L.6
Touzeau, M.7
-
11
-
-
33750834234
-
The ion energy distributions and ion flux composition from a high power impulse magnetron sputtering discharge
-
Dec. 5
-
J. Bohlmark, M. Lattemann, J. T. Gudmundsson, A. P. Ehiasarian, Y. Aranda Gonzalvo, N. Brenning, and U. Helmersson, "The ion energy distributions and ion flux composition from a high power impulse magnetron sputtering discharge, " Thin Solid Films, vol. 515, no. 4, pp. 1522-1526, Dec. 5, 2006.
-
(2006)
Thin Solid Films
, vol.515
, Issue.4
, pp. 1522-1526
-
-
Bohlmark, J.1
Lattemann, M.2
Gudmundsson, J.T.3
Ehiasarian, A.P.4
Gonzalvo, Y.A.5
Brenning, N.6
Helmersson, U.7
-
12
-
-
33846228869
-
High-power pulsed sputtering using a magnetron with enhanced plasma confinement
-
Jan
-
J. Vlèek, P. Kudláèek, K. Burcalová, and J. Musil, "High-power pulsed sputtering using a magnetron with enhanced plasma confinement, " J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 25, no. 1, pp. 42-47, Jan. 2007.
-
(2007)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.25
, Issue.1
, pp. 42-47
-
-
Vlèek, J.1
Kudláèek, P.2
Burcalová, K.3
Musil, J.4
-
13
-
-
33747353804
-
2 mixtures
-
Aug. 7
-
2 mixtures, " J. Appl. Phys., vol. 100, no. 3, p. 033305, Aug. 7, 2006.
-
(2006)
J. Appl. Phys.
, vol.100
, Issue.3
, pp. 033305
-
-
Andersson, J.M.1
Wallin, E.2
Münger, E.P.3
Helmersson, U.4
-
15
-
-
84953678683
-
Measurements of secondary electron emission in reactive sputtering of aluminum and titanium nitride
-
May
-
M. A. Lewis, D. A. Glocker, and J. Jorne, "Measurements of secondary electron emission in reactive sputtering of aluminum and titanium nitride, " J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 7, no. 3, pp. 1019-1024, May 1989.
-
(1989)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.7
, Issue.3
, pp. 1019-1024
-
-
Lewis, M.A.1
Glocker, D.A.2
Jorne, J.3
-
16
-
-
27744509960
-
Reduction of transient regime in fast preionized high-power pulsed-magnetron discharge
-
Nov
-
P. Vasina, M. Mesko, M. Ganciu, J. Bretagne, C. Boisse-Laporte, L. de Poucques, and M. Touzeau, "Reduction of transient regime in fast preionized high-power pulsed-magnetron discharge, " Europhys. Lett., vol. 72, no. 3, pp. 390-395, Nov. 2005.
-
(2005)
Europhys. Lett.
, vol.72
, Issue.3
, pp. 390-395
-
-
Vasina, P.1
Mesko, M.2
Ganciu, M.3
Bretagne, J.4
Boisse-Laporte, C.5
De Poucques, L.6
Touzeau, M.7
-
17
-
-
30744468091
-
Transport of ionized metal atoms in high-power pulsed magnetron discharges assisted by inductively coupled plasma
-
Jan
-
S. Konstantinidis, J. P. Dauchot, M. Ganciu, and M. Hecq, "Transport of ionized metal atoms in high-power pulsed magnetron discharges assisted by inductively coupled plasma, " Appl. Phys. Lett., vol. 88, no. 2, p. 021501, Jan. 2006.
-
(2006)
Appl. Phys. Lett.
, vol.88
, Issue.2
, pp. 021501
-
-
Konstantinidis, S.1
Dauchot, J.P.2
Ganciu, M.3
Hecq, M.4
-
18
-
-
0035926855
-
Evolution of the electron energy distribution and plasma parameters in a pulsed magnetron discharge
-
DOI 10.1063/1.1376150
-
J. T. Gudmundsson, J. Alami, and U. Helmersson, "Evolution of the electron energy distribution and plasma parameters in a pulsed magnetron discharge, " Appl. Phys. Lett., vol. 78, no. 22, pp. 3427-3429, May 28, 2001. (Pubitemid 33666781)
-
(2001)
Applied Physics Letters
, vol.78
, Issue.22
, pp. 3427-3429
-
-
Gudmundsson, J.T.1
Alami, J.2
Helmersson, U.3
|