Enhanced electrical properties of pulsed laser-deposited CuIn0.7Ga0.3Se2 thin films via processing control

Solar Energy

Volumn 84, Issue 12, 2010, Pages 2213-2218

  Jo, Yeon Hwa ^a   Mohanty, Bhaskar Chandra ^a   Cho, Yong Soo ^a  

^a Yonsei University   (South Korea)

Author keywords

Crystallization; CuIn0.7Ga0.3Se2 thin film; Electrical properties; Pulsed laser deposition

Indexed keywords

CIGS FILMS; CIGS THIN FILMS; CRYSTALLINITIES; CUIN0.7GA0.3SE2 THIN FILM; ELECTRICAL PROPERTY; LASER ENERGIES; POLYCRYSTALLINE; PROCESS PARAMETERS; PULSED LASER; RAMAN SPECTRA; REPETITION RATE; ROOM TEMPERATURE; SODA LIME GLASS SUBSTRATE; SUBSTRATE TEMPERATURE;

CARRIER CONCENTRATION; COPPER; CRYSTALLIZATION; DEPOSITION; ELECTRIC PROPERTIES; GALLIUM; GLASS LASERS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SODIUM; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION;

PULSED LASERS;

CONCENTRATION (COMPOSITION); COPPER; CRYSTALLINITY; DIFFUSION; ELECTRIC FIELD; GLASS; LASER; SODIUM; TEMPERATURE EFFECT;

EID: 78349310348     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2010.08.005     Document Type: Article

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