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Volumn 519, Issue 4, 2010, Pages 1367-1370
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Study on W/SiC interface of SiC fiber fabricated by chemical vapor deposition on tungsten filament
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Author keywords
Chemical vapor deposition; Interfacial reaction; Silicon carbide fibre; Transmission electron microscopy; Tungsten
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Indexed keywords
DIRECT CURRENT;
ELECTRON DIFFRACTION ANALYSIS;
FORMATION MECHANISM;
GAS SYSTEMS;
INTERFACIAL REACTION ZONES;
INTERFACIAL REACTIONS;
SCANNING ELECTRON MICROSCOPE;
SIC FIBERS;
SILICON CARBIDE FIBRE;
TRANSMISSION ELECTRON;
TRANSMISSION ELECTRON MICROSCOPE;
TUNGSTEN FILAMENTS;
ELECTRON MICROSCOPES;
ELECTRONS;
FIBERS;
SCANNING ELECTRON MICROSCOPY;
SILICON;
SILICON CARBIDE;
TRANSMISSION ELECTRON MICROSCOPY;
TUNGSTEN;
TUNGSTEN CARBIDE;
CHEMICAL VAPOR DEPOSITION;
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EID: 78349308970
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.09.025 Document Type: Article |
Times cited : (9)
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References (16)
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