Hall effects and related phenomena in disordered Rashba 2DEG

Semiconductor Science and Technology

Volumn 24, Issue 6, 2009, Pages

  Inoue, Jun Ichiro ^a   Kato, Takashi ^a   Bauer, Gerrit E W ^b   Molenkamp, Laurens W ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MAGNETORESISTANCE; ANOMALOUS HALL EFFECTS; BALLISTIC TRANSPORTS; DISORDER EFFECT; HALL CONDUCTIVITY; INTRINSIC SPIN; RASHBA-TYPE SPIN-ORBIT; SPIN HALL CONDUCTIVITY; SPIN-ACCUMULATIONS; SPIN-POLARIZED; VERTEX CORRECTION;

ANISOTROPY; BALLISTICS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRON GAS; GYRATORS; HALL EFFECT; MAGNETOELECTRONICS; MAGNETORESISTANCE; TRANSPORT PROPERTIES; TWO DIMENSIONAL ELECTRON GAS;

MAGNETIC FIELD EFFECTS;

EID: 78349247042     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/6/064003     Document Type: Article

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