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Physical Review Letters

Volumn 94, Issue 22, 2005, Pages

Ab initio calculation of the intrinsic spin hall effect in semiconductors

(3) Guo, G Y a Yao, Yugui b Niu, Qian c

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF PHYSICS (China)

c UNIVERSITY OF TEXAS AT AUSTIN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL CONDUCTIVITY; LUTTINGER HAMILTONIAN; ORBITAL-ANGULAR- MOMENTUM;

BAND STRUCTURE; HAMILTONIANS; HOLE TRAPS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

HALL EFFECT;

EID: 27744608898 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.94.226601 Document Type: Article

Times cited : (183)

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