Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1335-1339

  Findeisen, C ^a   Herr, E ^a   Schenkel, M ^a   Schlegel, R ^a   Zeller, H R ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COSMIC RAYS; ELECTRIC POTENTIAL; FAILURE ANALYSIS; NEUTRONS; PARTICLE ACCELERATORS; THYRISTORS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032084050     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00151-6     Document Type: Article

References (7)

1. H. Kabza et al., Proc IEEE Intern. Symp. Power Semicond. Devices and ICs, Davos, pp. 9-12, 1994
2. H.R. Zeller, Proc IEEE Intern. Symp.Power Semicond. Devices and ICs, Davos, pp. 339-340, 1994
3. P. Voss et al., Proc IEEE Intern. Symp. Power Semicond. Devices and ICs, Weimar, pp. 169-172, 1997
4. IBM Journal of Research and Development, Vol. 40, No. 1, pp. 19-39, January 1996
5. S. Wender, LANSCE, private communication
6. J.F.Ziegler and W.A.Lanford, J.Appl.Phys. 52, No 6, pp. 4305-4312, 1981
7. H.R. Zeller, Microelectron. Reliab., Vol. 37, No. 10/11, pp. 1711-1718, 1997