Heavy ion induced failures in a power IGBT1

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 2353-2357

  Lorfevre, Eric ^a   Dachs, Charles ^b   Detcheverry, Céline ^b   Palau, Jean Marie ^b   Gasiot, Jean ^b   Roubaud, Franck ^b   Calvet, Marie Catherine ^b   Ecoffet, Robert ^b  

^a UNIV MONTPELLIER   (France)

^b UNIVERSITÉ DES ANTILLES ET DE LA GUYANE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; GATES (TRANSISTOR); IONS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0031342843     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659061     Document Type: Article

References (13)

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