Thermal modeling of single event burnout failure in semiconductor power devices

Microelectronics Reliability

Volumn 41, Issue 4, 2001, Pages 571-578

  Walker, D G ^a   Fisher, T S ^a   Liu, J ^a   Schrimpf, R D ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FAILURE ANALYSIS; HEAVY IONS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; THERMAL STRESS;

SINGLE EVENT BURNOUT (SEB);

MICROELECTRONICS;

EID: 0035310861     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00249-3     Document Type: Article

References (15)

1. Burnout of power MOS transistors with heavy ions of 252-Cf
2. Features of the triggering mechanism for single event burnout of power MOSFETs
3. Analytical model for single event burnout of power MOSFETs
4. A review of the techniques used for modeling single-event effects in power MOSFETs
5. Simulating single-event burnout of n-channel power MOSFET's
6. Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFET's
7. Heavy ion induced failures in a power IGBT
8. Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects
9. Thermal component models for electro-thermal network simulation
10. Electrothermal simulation and design of integrated circuits