A novel high-k gate dielectric HfLaO for next generation CMOS technology

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 372-375

  Li, Ming Fu ^a,b,c   Wang, X P ^a,b   Yu, H Y ^d   Zhu, C X ^a   Chin, Albert ^e   Du, A Y ^b   Shao, J ^f   Lu, W ^f   Shen, X C ^f   Liu, Patricia ^g   Hung, Steven ^g   Lo, Patrick ^b   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c FUDAN UNIVERSITY   (China)

^d IMEC   (Belgium)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^f SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^g APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; THERMODYNAMIC STABILITY;

BIAS TEMPERATURE INSTABILITY (BTI); CRYSTALLIZATION TEMPERATURE; METAL GATES; OXYGEN VACANCY;

GATE DIELECTRICS;

EID: 34547331110     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306255     Document Type: Conference Paper

References (22)

1. ITRS, online at http://publicitrs.net.ed. 2005.
2. J. K. Schaeffer et al., IEDM, p.287 (2004).
3. V. Narayanam et al., Symp. VLSI Tech, p. 192 (2004).
4. S. Inumiya et al., IEDM, p.27 (2005).
5. H. C. Wen et al., Symp.VLSI Tech., p.46 (2005).
6. Z. B. Zhang et al., Symp. VLSI Tech., p.50 (2005).
7. E. Cartier et al., Symp.VLSI Tech., p.230 (2005).
8. W. J. Zhu et al., IEEE EDL, 23, p.649 (2002).
9. E. P. Gusev et al., IEDM, p.451 (2001).
10. A. Shanware et al., IEDM, p.939 (2003).
11. Indranil De et al., SSE, 44, p.1077 (2000).
12. Tony Low et al., IEDM, p.151 (2004).
13. S. B. Samavedam et al., IEDM, p.307 (2003).
14. Y. C. Yeo et al., JAP, 92, p.7266 (2002).
15. H. Y. Yu et al., IEEE EDL, 25, p.337 (2004).
16. R. Jha et al., IEDM, p.47 (2005).
17. D. S. Yu et al., IEDM, p.181 (2000).
18. Kazuyuki Tomida et al., SSDM, p.790 (2004).
19. D. A. Neumayer et al., JAP, 90(4), p.1801 (2001).
20. Z. Ren et al., IEDM, p.793 (2003).
21. J. Aarik et al, Appl.Surface Sci., 173, p.15 (2001).
22. A. W. Sleight, Inorganic Chemistry, 7, p. 1704 (Table IV) (1968).