Field-effect transistor characteristics and microstructure of regioregular poly(3-hexylthiophene) on alkylsilane self-assembled monolayers prepared by microcontact printing

Organic Electronics

Volumn 11, Issue 7, 2010, Pages 1323-1326

  Kushida, Takashi ^a   Nagase, Takashi ^b   Naito, Hiroyoshi ^b  

^a Integrative Technology Research Institute   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

Grazing incidence X ray diffraction; Microcontact printing; Organic field effect transistor; Poly(3 hexylthiophene); Self assembled monolayers

Indexed keywords

CARRIER MOBILITY; ELECTRON DEVICE MANUFACTURE; FILM PREPARATION; MOLECULAR ORIENTATION; ORGANIC FIELD EFFECT TRANSISTORS; X RAY DIFFRACTION;

DIFFRACTION INTENSITY; FIELD-EFFECT MOBILITIES; GRAZING INCIDENCE X-RAY DIFFRACTION; LIQUID PHASE DEPOSITIONS (LPD); MICRO CONTACT PRINTING; OCTADECYLTRICHLOROSILANE; POLY (3-HEXYLTHIOPHENE); TRANSISTOR CHARACTERISTICS;

SELF ASSEMBLED MONOLAYERS;

EID: 78149470800     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.04.011     Document Type: Article

References (23)

1. G. Horowitz, J. Mater. Res. 19 (2004) 1946.
2. M.L. Chabinyc, A. Salleo, Chem. Mater. 16 (2004) 4509.
3. H. Katz, Z. Bao, J. Phys. Chem. B 104 (2000) 671.
4. C. Dimitrakopoulos, P. Malenfant, Adv. Mater. 14 (2002) 99.
5. H. Sirringhaus, P.J. Brown, R.H. Friend, M.M. Nielsen, K. Bechgaard, B.M. Langeveld-Voss, A.J.H. Spiering, R.A.J. Janssen, E.W. Meijer, P. Herwig, D.M. de Leeuw, Nature 401 (1999) 685.
6. R.J. Kline, M.D. McGehee, E.N. Kadnikova, J. Liu, J.M. Frechet, Adv. Mater. 15 (2003) 1519.
7. J.-F. Chang, B. Sun, D.W. Breiby, M.M. Nielson, T.I. Solling, M. Giles, I. McCulloch, H. Sirringhaus, Chem. Mater. 16 (2004) 4772.
8. H. Yang, T.J. Shin, L. Yang, K. Cho, C.Y. Ryu, Z. Bao, Adv. Func. Mater. 15 (2005) 671.
9. R.J. Kline, M.D. McGehee, M.F. Toney, Nat. Mater. 5 (2006) 222.
10. S. Grecu, M. Roggenbuck, A. Opitz, W. Brütting, Org. Electron. 7 (2006) 276.
11. A. Kumar, G.M. Whitesides, Appl. Phys. Lett. 63 (1993) 2002.
12. Y. Xia, M. Mrksich, E. Kim, G.M. Whitesides, J. Am. Chem. Soc. 117 (1995) 4576.
13. C.R. Kagan, T.L. Breen, L.L. Kosbar, Appl. Phys. Lett. 79 (2001) 3536.
14. M.L. Chabinyc, W.S. Wong, A. Salleo, K.E. Paul, R.A. Street, Appl. Phys. Lett. 81 (2002) 4260.
15. Y. Wang, M. Lieberman, Langmuir 19 (2003) 1159.
16. S.R. Wasserman, Y.T. Tao, G.M. Whitesides, Langmuir 5 (1989) 1074.
17. A.Y. Fadeev, T.J. McCarthy, Langmuir 16 (2000) 7268.
18. A. Ralland, J. Richard, J.P. Kleider, D. Mencaraglia, J. Electrochem. Soc. 140 (1993) 3679.
19. A.B. Chwang, C.D. Frisbie, J. Appl. Phys. 90 (2001) 1342.
20. T.W. Kelley, C.D. Frisbie, J. Phys. Chem. B 105 (2001) 4538.
21. M.L. Chabinyc, M.F. Toney, R.J. Kline, I. McCulloch, M. Heeney, J. Am. Chem. Soc. 129 (2007) 3226.
22. B.H. Hamadani, C.A. Richter, D.J. Gundlach, R.J. Kline, I. McCulloch, M. Heeney, J. Appl. Phys. 102 (2007) 044503.
23. M. Shur, M. Hack, J. Appl. Phys. 55 (1984) 3831.