Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes

Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

  Feng, Y ^a   Lee, K ^b   Farhat, H ^b,c   Kong, J ^b  

^a BEIJING JIAOTONG UNIVERSITY   (China)

^b Department of Electrical Engineering and Computer Science   (United States)

^c USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINATION PROCESS; ELECTRICAL CURRENT; ETCHING STEP; GATE VOLTAGES; IN-FIELD; ON/OFF RATIO; ORDERS OF MAGNITUDE; SUBSTRATE ETCHING;

CARBON NANOTUBES; ELECTRON MULTIPLIERS; ETCHING; SINGLE-WALLED CARBON NANOTUBES (SWCN);

FIELD EFFECT TRANSISTORS;

EID: 71749121400     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3253737     Document Type: Article

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