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Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes

(4) Feng, Y a Lee, K b Farhat, H b,c Kong, J b

a BEIJING JIAOTONG UNIVERSITY (China)

b Department of Electrical Engineering and Computer Science (United States)

c Massachusetts Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINATION PROCESS; ELECTRICAL CURRENT; ETCHING STEP; GATE VOLTAGES; IN-FIELD; ON/OFF RATIO; ORDERS OF MAGNITUDE; SUBSTRATE ETCHING;

CARBON NANOTUBES; ELECTRON MULTIPLIERS; ETCHING; SINGLE-WALLED CARBON NANOTUBES (SWCN);

FIELD EFFECT TRANSISTORS;

EID: 71749121400 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3253737 Document Type: Article

Times cited : (19)

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