Electrical characteristics of polymer field-effect transistors with poly(methylsilsesquioxane) gate dielectrics on plastic substrates

Thin Solid Films

Volumn 517, Issue 4, 2008, Pages 1343-1345

  Yamazaki, Saori ^a,b,c   Hamada, Takashi ^a,c   Tomatsu, Kenji ^a   Ueda, Yusuke ^a   Nagase, Takashi ^a,c   Kobayashi, Takashi ^a,c   Murakami, Shuichi ^c,d   Matsukawa, Kimihiro ^c,d   Naito, Hiroyoshi ^a,c  

^a Osaka Prefecture University   (Japan)

^b CITIZEN WATCH CO LTD   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Gate insulator; Organic field effect transistor; Plastic substrate; Poly(methylsilsesqioxane)

Indexed keywords

DRAIN CURRENT; FABRICATION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; OXYGEN; PLASTICS; POLYMERIC GLASS; POLYMERS; TRANSISTORS;

ELECTRICAL CHARACTERISTICS; ELECTRICAL PERFORMANCES; GATE INSULATOR; GATE INSULATORS; GLASS SUBSTRATES; INORGANIC HYBRIDS; LOW CURING TEMPERATURES; METHYL SILSESQUIOXANE; ORGANIC FIELD-EFFECT TRANSISTOR; PLASTIC SUBSTRATE; PLASTIC SUBSTRATES; POLY(METHYLSILSESQIOXANE); POLYMER FIELDS; RESIDUAL OXYGENS; SOLUTION PROCESSES; STABLE CHARACTERISTICS; THERMAL ANNEALING;

SUBSTRATES;

EID: 57049159786     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.09.004     Document Type: Article

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