π-Conjugated polymer/GaN Schottky solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 284-287

  Matsuki, Nobuyuki ^a,c   Irokawa, Yoshihiro ^a   Nakano, Yoshitaka ^b   Sumiya, Masatomo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b CHUBU UNIVERSITY   (Japan)

^c GIFU UNIVERSITY   (Japan)

Author keywords

Conjugated polymer; GaN; Heterojunction; Schottky

Indexed keywords

ELECTRICAL PROPERTY; GAN; GAN/SAPPHIRE; HIGH QUALITY; PEDOT:PSS; PHOTO-VOLTAGE; PHOTOVOLTAIC PERFORMANCE; POLY(STYRENE SULFONATE); RECTIFYING CHARACTERISTICS; REVERSE BIAS VOLTAGE; REVERSE LEAKAGE CURRENT; SCHOTTKY; SCHOTTKY CONTACTS; SCHOTTKY PHOTODETECTORS;

DISTILLATION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; OPTOELECTRONIC DEVICES; POLYANILINE; SOLAR CELLS; SULFUR COMPOUNDS;

CONJUGATED POLYMERS;

EID: 78149359549     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.04.063     Document Type: Conference Paper

References (19)

1. J. Wu When group-III nitrides go infrared: new properties and perspectives J. Appl. Phys. 106 1 2009 061101-1 061101-28
2. R. Dahal, B. Pantha, J. Li, J.Y. Lin, and H.X. Jiang InGaN/GaN multiple quantum well solar cells with long operating wavelengths Appl. Phys. Lett. 94 6 2009 063505-1 063505-3
3. X. Chen, K.D. Mattews, D. Hao, W.J. Schaff, and L.F. Eastman Growth, fabrication, and characterization of InGaN solar cells, Phys Status Solidi A 205 5 2008 1103 1105
4. C.J. Neufeld, N.G. Toledo, S.C. Cruz, M. Iza, S.P. DenBaars, and U.K. Mishra High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap Appl. Phys. Lett. 93 14 2008 143502-1 143502-3
5. O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz Design and characterization of GaN/InGaN solar cells Appl. Phys. Lett. 91 13 2007 132117-1 132117-3
6. 1-xN tandem PV structures Sol. Energy Mater. Sol. Cells 87 14 2005 595 603
7. A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean High doping level in Mg-doped GaN layers grown at low temperature J. Appl. Phys. 103 1 2008 013110-1 013110-6
8. K. Fehse, K. Walzer, K. Leo, W. Lvenich, and A. Elschner Highly conductive polymer anodes as replacements for inorganic materials in high-efficiency organic light-emitting diodes Adv. Mater. 19 3 2007 441 444
9. K. Lee, S. Cho, S.H. Park, A.J. Heeger, C.-W. Lee, and S.-H. Lee Metallic transport in polyaniline Nature 441 2006 65 68
10. J. Jang, J. Ha, and K. Kim Organic light-emitting diode with polyaniline-poly(styrene sulfonate) as a hole injection layer Thin Solid Films 516 10 2008 3152 3156
11. M. Nakano, T. Makino, A. Tsukazaki, K. Ueno, A. Ohtomo, T. Fukumura, H. Yuji, S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, and M. Kawasaki Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO Appl. Phys. Lett. 93 12 2008 123309-1 123309-3
12. N. Matsuki, Y. Irokawa, T. Matsui, M. Kondo, and M. Sumiya Appl. Phys. Express 2 9 2009 092201-1 092201-3
13. 2 thin films deposited by RF magnetron sputtering Thin Solid Films 516 17 2008 5814 5817
14. 2 Schottky contact Appl. Phys. Lett. 81 24 2002 4655 4657
15. Y. Zhou, C. Ahyi, C.-C. Tin, J. Williams, Minseo Parka, D.J. Kim, A.J. Cheng, D. Wang, A. Hanser, E.A. Preble, N.M. Williams, and K. Evans Fabrication and device characteristics of Schottky-type bulk GaN-based "visible- blind" ultraviolet photodetectors Appl. Phys. Lett. 90 12 2007 121118-1 121118-3
16. C.I. Wu, and A. Kahn Electronic states and effective negative electron affinity at cesiated p-GaN surfaces J. Appl. Phys. 86 1999 3209 3212
17. J.A. Aranovich, D. Golmayo, A.L. Fahrenbruch, and R.H. Bube Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis J. Appl. Phys. 51 8 1980 4260 4268
18. T.U. Kampen Electronic structure of organic interfaces: a case study on perylene derivatives Appl. Phys. A 82 3 2006 457 470
19. 1-xN (0 0 0 1) surfaces Appl. Phys. Lett. 78 17 2001 2503 2505