(0 0 1)-oriented Bi2Sr2Co2Oy and Ca3Co4O9 films: Self-assembly orientation and growth mechanism by chemical solution deposition

Acta Materialia

Volumn 58, Issue 12, 2010, Pages 4281-4291

  Zhu, Xuebin ^a,b   Shi, Dongqi ^b   Dou, Shixue ^b   Sun, Yuping ^a   Li, Qi ^b   Wang, Lin ^b   Li, Wenxian ^b   Yeoh, Weikong ^c   Zheng, Rongkun ^c   Chen, Zhixin ^b   Kong, Chunxiu ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY OF WOLLONGONG   (Australia)

^c UNIVERSITY OF SYDNEY   (Australia)

^d UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Chemical solution deposition; Film; Self assembly; Thermoelectric

Indexed keywords

AMORPHOUS FILMS; CALCIUM; CARBON DIOXIDE; CHEMICALS; COBALT; COBALT COMPOUNDS; DEPOSITION; FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); SINGLE CRYSTALS; STRONTIUM ALLOYS; STRONTIUM TITANATES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

C-AXIS ORIENTATIONS; CHEMICAL SOLUTION DEPOSITION; MICROSTRUCTURES AND PROPERTIES; SINGLE CRYSTAL SUBSTRATES; SOLVENT EVAPORATION; THERMOELECTRIC; THERMOELECTRIC APPLICATION; THERMOELECTRIC FILM;

SELF ASSEMBLY;

EID: 78149342749     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2010.04.021     Document Type: Article

References (47)

1. Bux SK, Blair RG, Gogna PK, Lee H, Chen G, Dresselhaus MS, et al. Adv Func Mater 2009;19:2455.
2. Snyder GJ, Toberer ES. Nat Mater 2008;7:105.
3. Chen G, Dresselhaus MS, Fleurial JP, Caillat T. Int Mater Rev 2003;48:45.
4. Minnich AJ, Dresselhaus MS, Ren ZF, Chen G. Energy Environ Sci 2009;2:466.
5. Terasaki I, Sasago Y, Uchinokura K. Phys Rev B 1997;56:R12685.
6. Ohta H, Sugiura K, Koumoto K. Inorg Chem 2008;47:8429.
7. Masset AC, Michel C, Maignan A, Hervieu M, Toulemonde O, Studer F, et al. Phys Rev B 2000;62:166.
8. Wang SF, Venimadhav A, Guo SM, Chen K, Li Q, Soukiassian A, et al. Appl Phys Lett 2009;94:022110.
9. Maignan A, Kobayashi W, Hébert S, Martinet G, Pelloguin D, Bellido N, et al. Inorg Chem 2008;47:8553.
10. Venkatasubramanian R, Siivola E, Colpitts T, O'Quinn B. Nature 2001;413:597.
11. Hu YF, Si WD, Sutter E, Li Q. Appl Phys Lett 2005;86:082103.
12. Hu YF, Sutter E, Si WD, Li Q. Appl Phys Lett 2005;87:171912.
13. Sun T, Ma J, Yan QY, Huang YZ, Wang JL, Hng HH. J Cryst Growth 2009;311:4123.
14. Moubah R, Colis S, Ulhaq-Bouillet C, Schmerber G, Viart N, Drillon M, et al. Eur Phys J B 2008;66:315.
15. Matsubara I, Funahashi R, Shikano M, Sasaki K, Enomoto H. Appl Phys Lett 2002;80:4729.
16. Wang SF, Chen MJ, He LP, Zheng J, Yu W, Fu GS. J Phys D 2009;42:045410.
17. Liu CJ, Nayak PK, Lin ZR, Jeng KY. Thin Solid Films 2008;516:8564.
18. Wang SF, Zhang ZC, He LP, Chen MJ, Yu W, Fu GS. Appl Phys Lett 2009;94:162108.
19. Habouti S, Lahmar A, Dietze M, Solterbeck C, Zaporojtchenko V, Es-Souni M. Acta Mater 2009;57:2328.
20. Hardy A, Van Elshocht S, Adelmann C, Kittl JA, De Gendt S, Heyns M, et al. Acta Mater 2010;58:216.
21. Schwartz RW. Chem Mater 1997;9:2325.
22. Lange FF. Science 1996;273:903.
23. Zhu XB, Sun YP, Lei HC, Li XH, Ang R, Zhao BC, et al. J Appl Phys 2007;102:103519.
24. Zhu XB, Chou SL, Wang L, Li Q, Shi DQ, Wang JZ, et al. Electrochem Solid State Lett 2009;12:176.
25. Kim DW, Ko YD, Park JG, Kim BK. Angew Chem Int Ed 2007;46:6654.
26. Fu Z, Vilarinho PM, Wu AY, Kingon AI. Adv Func Mater 2009;19:1.
27. Yang H, Wang HY, Yoon J, Wang YQ, Jain M, Feldmann DM, et al. Adv Func Mater 2009;21:1.
28. Kwon SJ, Park JH, Park JG. Phys Rev E 2005;71:011604.
29. Kwon SJ, Park JG. Langmuir 2006;22:3895.
30. Zhang FP, Lu QM, Zhang JX, Zhang X. J Alloys Compd 2009;477:543.
31. Zhang FP, Lu QM, Zhang JX. Physica B 2009;404:2142.
32. Lin YH, Lan JL, Shen ZJ, Liu YH, Nan CW, Li JF. Appl Phys Lett 2009;94:072107.
33. Zhou YQ, Matsubara I, Horii S, Takeuchi T, Funahashi R, Shikano M, et al. J Appl Phys 2003;93:2653.
34. Prevel M, Reddy ES, Perez O, Kobayashi W, Rerasaki I, Goupil C, et al. Jpn J Appl Phys 2007;46:6533.
35. Fukutomi H, Iguchi E. Acta Mater 2007;55:4213.
36. Endo K, Badica P. Cryst Growth Des 2009;9:391.
37. Itoh T, Terasaki I. Jpn Appl Phy Part 1 2000;39:6658.
38. Koumoto K, Terasaki I, Funahashi R. MRS Bull 2006;31:206.
39. Funahashi R, Matsubara I, Sodeoka S. Appl Phys Lett 2000;76:2385.
40. Sugiura K, Ohta H, Koumoto K. Int J Appl Ceram Technol 2007;4:308.
41. Fisher B, Patlagan L, Reisner GM, Knizhnik A. Phys Rev B 2000;61:470.
42. Aschcroft NW, Mermin ND. Solid state physics. Philadelphia: Holt- Saunders; 1976.
43. Liu HQ, Song Y, Zhang SN, Zhao XB, Wang FP. J Phys Chem Solids 2009;70:600.
44. Sakai A, Kanno T, Yotsuhashi S, Odagawa A, Adachi H. Jpn J Appl Phys 2005;44:L966.
45. Limelett P, Hardy V, Auban-Senzier P, Jérome D, Flahaut D, Hébert S, et al. Phys Rev B 2005;71:233108.
46. Georges A, Kotliar G, Krauth W, Rozenberg MJ. Rev Mod Phys 1996;68:13.
47. Wang Y, Sui Y, Ren P, Wang L, Wang XJ, Su WH, et al. Chem Mater 2009;22:1155.