Epitaxial growth by chemical solution deposition of (110) NdNiO 3-δ films with a sharp metal-insulator transition annealed under ambient oxygen

Crystal Growth and Design

Volumn 10, Issue 11, 2010, Pages 4682-4685

  Zhu, Xuebin ^a   Tang, Xianwu ^a   Wang, Bosen ^a   Fu, Yankun ^b   Dai, Jianming ^a   Song, Wenhai ^a   Yang, Zhaorong ^a   Zhu, Xiaoguang ^a   Chen, Li ^a   Sun, Yuping ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b SHANDONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE ROUTES; AMBIENT OXYGEN; CHEMICAL SOLUTION DEPOSITION; CROSS-SECTION TRANSMISSION; ELECTRONIC MICROSCOPY; EPITAXIAL STABILIZATION; HIGH QUALITY; METALLIC STATE; NICKELATES; RESISTANCE CHANGE;

ANNEALING; CHEMICALS; EPITAXIAL GROWTH; FILM PREPARATION; METAL INSULATOR BOUNDARIES; OXYGEN; PEROVSKITE; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

EID: 78149310078     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg100755t     Document Type: Conference Paper

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