Quantum Hall activation gaps in bilayer graphene

Solid State Communications

Volumn 150, Issue 45-46, 2010, Pages 2209-2211

  Kurganova, E V ^a   Giesbers, A J M ^a   Gorbachev, R V ^b   Geim, A K ^b   Novoselov, K S ^b   Maan, J C ^a   Zeitler, U ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

A. Bilayer graphene; D. Landau levels; D. Quantum Hall effect

Indexed keywords

A. BILAYER GRAPHENE; BI-LAYER; ENERGY LEVEL; FIELD INDEPENDENTS; FILLING FACTOR; HIGH MAGNETIC FIELDS; HYPERBOLIC DISPERSION; LANDAU LEVELS; QUANTUM HALL; QUANTUM HALL EFFECT;

GRAPHENE; GYRATORS; HALL EFFECT; HALL EFFECT DEVICES; QUANTUM THEORY;

MAGNETIC FIELD EFFECTS;

EID: 78049425024     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.09.042     Document Type: Article

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