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Volumn 5, Issue 11, 2010, Pages 1812-1816

Nanoscratch characterization of GaN epilayers on c- and a-Axis sapphire substrates

Author keywords

Atomic force microscopy; Gallium nitride; Metal organic chemical vapor deposition; Nanoscratch

Indexed keywords

AFM; BRITTLE TRANSITIONS; COEFFICIENT OF FRICTIONS; DEFORMATION CHARACTERISTICS; GAN EPILAYERS; LATTICE STRUCTURES; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGICAL STUDY; MOTION OF INDIVIDUAL; NANO-SCRATCH; PILE-UPS; SAPPHIRE SUBSTRATES; SHEAR RESISTANCES;

EID: 78049423485     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9717-8     Document Type: Article
Times cited : (24)

References (22)
  • 7
    • 0000849604 scopus 로고
    • P. J. Blau and B. R. Lawn (Eds.), Philadelphia: American Society for Testing and Materials
    • W. C. Oliver, R. Hutchings, J. B. Pethica, in ASTM STP 889, ed. by P. J. Blau, B. R. Lawn (American Society for Testing and Materials, Philadelphia, 1986).
    • (1986) ASTM STP 889
    • Oliver, W.C.1    Hutchings, R.2    Pethica, J.B.3
  • 9
    • 34548416211 scopus 로고
    • V. Ashworth, W. Grant, and R. Procter (Eds.), Oxford: Pergamon Press
    • J. B. Pethica, in Ion Implantation into Metals, ed. by V. Ashworth, W. Grant, R. Procter (Pergamon Press, Oxford, 1982).
    • (1982) Ion Implantation into Metals
    • Pethica, J.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.