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Volumn 257, Issue 5, 2010, Pages 1469-1472
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Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire
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Author keywords
Atomic force microscopy (AFM); InGaN; Surface preparation; X ray photoelectron spectroscopy (XPS)
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CARBON FILMS;
FILM PREPARATION;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HYDROCHLORIC ACID;
HYDROFLUORIC ACID;
III-V SEMICONDUCTORS;
INDIUM ALLOYS;
INDIUM COMPOUNDS;
MIXTURES;
NITRIDES;
OXIDE FILMS;
OXYGEN;
PHOTOELECTRONS;
PHOTONS;
SAPPHIRE;
SEMICONDUCTOR ALLOYS;
SULFUR COMPOUNDS;
SURFACE CLEANING;
THIN FILMS;
X RAY PHOTOELECTRON SPECTROSCOPY;
CONCENTRATED NITRIC ACID;
HIGH-TEMPERATURE ANNEALS;
INDIUM GALLIUM NITRIDE;
INGAN;
PIRANHA SOLUTIONS;
SURFACE CLEANING PROCEDURE;
SURFACE CONTAMINATIONS;
SURFACE PREPARATION;
SURFACE ROUGHNESS;
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EID: 78049289041
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2010.08.074 Document Type: Article |
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Times cited : (7)
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References (10)
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