High-efficiency LDMOS power-amplifier design at 1 GHz using an optimized transistor model

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 1, 2009, Pages 1647-1654

  Nemati, Hossein Mashad ^a   Fager, Christian ^a   Thorsell, Mattias ^a   Zirath, Herbert ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Harmonically tuned; LDMOS; Power amplifier (PA); Switched mode

Indexed keywords

AMPLIFIER DESIGNS; DESIGN APPROACHES; HARMONICALLY TUNED; HIGH EFFICIENCY; LDMOS; LOAD NETWORK; LOW-PASS; MAXIMUM EFFICIENCY; POWER-ADDED EFFICIENCY; SECOND-HARMONIC; SIMPLIFIED MODELS; SIMULATIONS AND MEASUREMENTS; SWITCHED MODE; TRANSISTOR MODEL;

COMPUTER SIMULATION; DESIGN; MOS DEVICES; OPTIMIZATION; POWER AMPLIFIERS;

HARMONIC ANALYSIS;

EID: 77958089004     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (17)

1. S. C. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 2006.
2. A. Grebennikov and N. O. Sokal, Switchmode RF Power Amplifiers. London, U.K.: Newnes, 2007.
3. A. Adahl and H. Zirath, "An 1 GHz class E LDMOS power amplifier," in 33rd Eur. Microw. Conf., Oct. 2003, pp. 285-288.
4. F. Lepine, A. Adahl, and H. Zirath, "L-band LDMOS power amplifiers based on an inverse class-F architecture," IEEE Trans. Microw. Theory Tech., vol. 53, no. 6, pp. 2007-2012, Jun. 2005.
5. H. Nemati, C. Fager, and H. Zirath, "High efficiency LDMOS current mode class-D power amplifier at 1 GHz," in 36th Eur. Microw. Conf., Sep. 2006, pp. 176-179.
6. J. Komiak, "Student high efficiency power amplifier design competition," IEEE Microw. Mag., vol. 9, no. 1, pp. 54-56, Feb. 2008.
7. U. Gustavsson, T. Lejon, C. Fager, and H. Zirath, "Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices," in Eur. Microw. Conf., Oct. 2007, pp. 1089-1092.
8. D. Schmelzer and S. Long, "A GaN HEMT class F amplifier at 2 GHz with >80% PAE," IEEE J. Solid-State Circuits, vol. 42, no. 10, pp. 2130-2136, Oct. 2007.
9. R. Negra, T. Chu, M. Helaoui, S. Boumaiza, G. Hegazi, and K. Ghannouchi, "Switch-based GaN HEMT model suitable for highly-efficient RF power amplifier design," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 795-798.
10. T. Liang, J. Pla, P. Aaen, and M. Mahalingam, "Equivalent-circuit modeling and verification of metal-ceramic packages for RF and microwave power transistors," IEEE Trans. Microw. Theory Tech., vol. 47, no. 6, pp. 709-714, Jun. 1999.
11. C. v. Niekerk, P. Meyer, D.-P. Schreurs, and P. Winson, "A robust integrated multibias parameter-extraction method for MESFET and HEMT models," IEEE Trans. Microw. Theory Tech., vol. 48, no. 5, pp. 777-786, May 2000.
12. C. Fager, J. Pedro, N. Carvalho, and H. Zirath, "Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model," IEEE Trans. Microw. Theory Tech., vol. 50, no. 12, pp. 2834-2842, Dec. 2002.
13. P. Cabral, J. Pedro, and N. Carvalho, "Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design," IEEE Trans. Microw. Theory Tech., vol. 52, no. 11, pp. 2582-2592, Nov. 2004.
14. W. Curtice, L. Dunleavy,W. Clausen, and R. Pengelly, "New LDMOS model delivers powerful transistor library-Part 1: The CMC model," High Freq. Electron., vol. 3, pp. 18-25, Oct. 2004.
15. M. Miller, T. Dinh, and E. Shumate, G. Dawe, Ed., "A new empirical large signal model for silicon RF LDMOS FETs," in IEEE MTT-S Int. Microw. Symp. Dig., New York, NY, 1997, pp. 19-22.
16. D. Root, "Nonlinear charge modeling for FET large-signal simulation and its importance for IP3 and ACPR in communication circuits," in Proc. 44th IEEE Midwest Circuits Syst. Symp., 2001, vol. 2, pp. 768-772.
17. C. McAndrew, B. Bhattacharyya, and O.Wing, "A C∞-continuous depletion capacitance model," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 12, pp. 825-828, Jun. 1993.