Switch-based GaN HEMT model suitable for highly-efficient RF power amplifier design

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 795-798

  Negra, R ^b   Chu, T D ^a   Helaoui, M ^b   Boumaiza, S ^b   Hegazi, G M ^a   Ghannouchi, F M ^b  

^a ROCKWELL COLLINS   (United States)

^b UNIVERSITY OF CALGARY   (Canada)

Author keywords

GaN HEMTs; Nonlinear model; Power amplifier; RF circuits; Switching mode circuits; Transistor model

Indexed keywords

COMPUTER AIDED DESIGN; GALLIUM NITRIDE; MATHEMATICAL MODELS; NATURAL FREQUENCIES; POWER AMPLIFIERS; SWITCHING SYSTEMS;

GAN HEMT; NONLINEAR MODELS; RF CIRCUITS; SWITCHING MODE CIRCUITS; TRANSISTOR MODELS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748896677     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380078     Document Type: Conference Paper

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