Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices

Proceedings of the 37th European Microwave Conference, EUMC

Volumn , Issue , 2007, Pages 1089-1092

  Gustavsson, Ulf ^a,b   Lejon, Thomas ^a   Fager, Christian ^b   Zirath, Herbert ^b  

^a ERICSSON RESEARCH   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CLASS-D; EUROPEAN; HIGH OUTPUT POWER; HIGHLY EFFICIENT;

MICROWAVES;

EID: 48349140064     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2007.4405387     Document Type: Conference Paper

References (12)

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