L-band LDMOS power amplifiers based on an inverse class-F architecture

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 6 II, 2005, Pages 2007-2012

  Lépine, Fabien ^a   Ådahl, Andreas ^a   Zirath, Herbert ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Class E; Class F; High efficiency; Inverse class F; LDMOS; Power amplifier (PA); Quadrature phase shift keying (QPSK)

Indexed keywords

CAPACITANCE; CAPACITORS; COMPUTER AIDED DESIGN; ELECTRIC BREAKDOWN; ELECTRIC IMPEDANCE; HARMONIC ANALYSIS; MOS DEVICES; PERMITTIVITY; QUADRATURE PHASE SHIFT KEYING;

CLASS E; CLASS F; HIGH EFFICIENCY; INVERSE CLASS F; LDMOS;

POWER AMPLIFIERS;

EID: 23144436393     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.848830     Document Type: Conference Paper

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