Geometry effect on the strain-induced self-rolling of semiconductor membranes

Nano Letters

Volumn 10, Issue 10, 2010, Pages 3927-3932

  Chun, Ik Su ^a   Challa, Archana ^a   Derickson, Brad ^a   Hsia, K Jimmy ^a   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

finite element method; GaAs MOCVD; semiconductor micro and nanotubes; Strain induced self rolling

Indexed keywords

CRITICAL INFORMATION; ETCHING ANISOTROPY; FINAL STATE; GAAS; GAAS MEMBRANE; GEOMETRICAL DIMENSIONS; GEOMETRY EFFECTS; KINETIC CONTROL; MICRO ELECTRO MECHANICAL SYSTEM; PRECISE POSITIONING; ROLLING DIRECTION; ROLLING PROCESS; SEMICONDUCTOR MICRO- AND NANOTUBES;

GALLIUM ALLOYS; GALLIUM ARSENIDE; MEMS; MICROELECTROMECHANICAL DEVICES; NANOTUBES; SEMICONDUCTING GALLIUM;

FINITE ELEMENT METHOD;

EID: 77958030726     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl101669u     Document Type: Article

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