|
Volumn 310, Issue 16, 2008, Pages 3710-3713
|
Growth of GaNAs films with As2 source in atomic hydrogen-assisted molecular beam epitaxy
|
Author keywords
A1 Atomic force microscopy; A3 Molecular beam epitaxy; B1 Alloys; B2 Semiconducting III V materials
|
Indexed keywords
|
EID: 48049100130
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.05.027 Document Type: Article |
Times cited : (5)
|
References (12)
|