Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns

Journal of Electron Microscopy

Volumn 59, Issue 5, 2010, Pages 367-378

  Saitoh, Koh ^a   Yasuda, Yoshifumi ^a   Hamabe, Maiko ^a   Tanaka, Nobuo ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

convergent beam electron diffraction; lattice bending strain; lattice parameter determination; strained silicon

Indexed keywords

HOUGH TRANSFORMS; INTERFACES (MATERIALS); LATTICE CONSTANTS; SUBSTRATES;

BENDING STRAIN; CONVERGENT BEAMS; CONVERGENT-BEAM ELECTRON DIFFRACTION; HIGHER ORDER LAUE ZONES; LATTICE BENDING; LATTICE BENDING STRAIN; LATTICE PARAMETER DETERMINATION; PARAMETER DETERMINATION; SI SUBSTRATES; STRAINED-SILICON;

ELECTRON DIFFRACTION;

EID: 77957991114     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfq016     Document Type: Article

References (26)

1. Schaeffler F (1997) High-mobility Si and Ge structures. Semicond. Sci. Technol. 12: 1515-1549.
2. Uyeda R, Nonoyama M, and Kogiso M (1965) Determination of the wavelength of electrons from Kikuchi pattern. J. Electron Microsc. 14: 46-50.
3. Zuo J M (1992) Automated lattice parameter measurement from HOLZ lines and their use for the measurement of oxygen content in YBa2Cu3O7-d from nanometer-sized region. Ultramicroscopy 41: 211-223.
4. Krämer S and Mayer J (1998) Using the Hough transform for HOLZ line identification in convergent 22 beam electron diffraction. J. Microsc. 194: 2-11.
5. Kaiser U, Saitoh K, Tsuda K, and Tanaka M (1999) Application of the CBED method for the determination of lattice parameters of cubic SiC films on 6H SiC substrates. J. Electron Microsc. 48: 221-233.
6. Akaogi T, Tsuda K, Terauchi M, and Tanaka M (2006) Local lattice parameter determination of a silicon (001) layer grown on a sapphire (101102) substrate using convergent-beam electron diffraction. J. Electron Microsc. 55: 129-135.
7. Toda A, Ikarashi N, Ono H, and Okonogi K (2002) Determining the relationship between beam electron diffraction. Appl. Phys. Lett. 80: 2278-2280.
8. Lu Z, Pyczak F, Krämer S, Biermann H, and Mughrabi H (2003) Fast and reliable evaluation of lattice distortions from convergent-beam electron diffraction patterns. Philos. Mag. 83: 2383-2397.
9. Saitoh K, Yasuda Y, and Tanaka N (2008) Automated lattice-parameter determination by using HOLZ line patterns. International Journal of Advanced Microscopy and Theoretical Calculations 1: 90-91.
10. Cherns D, Kiely C J, and Preston A R (1988) Electron diffraction studies of strain in epitaxial bicrystals and multilayers. Ultramicroscopy 24: 355-370.
11. Vincent R, Preston A R, and King M A (1988) Measurement of strain in silver halide particles by convergent beam electron diffraction. Ultramicroscopy 24: 409-420.
12. Chou C T, Anderson S C, Cockayne D J H, Sikorski A Z, and Vaughan M R (1994) Surface relaxation of strained heterostructures revealed by Bragg line splitting in LACBED patterns. Ultramicroscopy 55: 334-347.
13. Chuvilin A, Kaiser U, de Robillard Q, and Engelmann H J (2005) On the origin of HOLZ lines splitting near interfaces: Multislice simulation of CBED patterns. J. Electron Microsc. 54: 515-517.
14. Houdellier F, Roucau C, Clément L, Rouvière J L, and Casanove M. J. (2006) Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers. Ultramicroscopy 106: 951-959.
15. Soeda T (2006) Stress analysis of semiconductor devices by split high order Laue zone patterns Proceedings of International Microscopic Congress, Sapporo, Japan, 1021 p.
16. Armigliato A, Balboni R, and Frabboni S (2005) Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures. Appl. Phys. Lett. 86: 063508.
17. Spessot A, Frabboni S, Balboni R, and Armigliato A (2007) Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles. J. Microsc. 226(2): 140-155.
18. Tsuda K, Mitsuishi H, Terauchi M, and Kawamura K (2007) Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections. J. Electron Microsc. 56: 57-61.
19. Yamazaki T, Kashiwagi A, Kuramochi K, Ohtsuka M, Hashimoto I, and Watanabe K (2008) Quantitative and easy estimation of a crystal bending effect using low-order CBED patterns. J. Electron Microsc. 57: 181-187.
20. Press W H, Teukolsky S A, Vetterling W T, and Flannery B P (2007) Numerical Recipe in C, 3 (Cambridge, Cambridge University Press).
21. Sakai A, Sugimoto K, Yamamoto T, Okada M, Ikeda H, Yasuda Y, and Zaima S. (2001) Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain - relaxation procedure. Appl. Phys. Lett. 79: 3398-3400. (Pubitemid 33600841)
22. Egawa T, Sakai A, Yamamoto T, Taoka N, Nakatsuka O, Zaima S, and Yasuda Y (2004) Strain relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates. Appl. Surf. Sci. 224: 104-107.
23. Chuvilin A, Kups T, and Kaiser U (2004) The effect of the signal-tonoise ratio in CBED patterns on the accuracy of lattice parameter determination. J. Electron Microsc. 53: 237-244.
24. Hÿtch M, Houdellier F, Hüe F, and Snoeck E (2008) Nanoscale holographic interferometry for strain measurements in electronic devices. Nature 453: 1086-1089.
25. Senez V, Armigliato A, De Wolf I, Carnevale G, Balboni R, Frabboni S., and Benedetti A (2003) Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy. J. Appl. Phys. 94: 5574-5583.
26. Vincent R, Walsh T D, and Pozzi M (1999) Iterative phase retrieval from kinematic rocking curves in CBED patterns. Ultramicroscopy 76: 125-137.