Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2792-2795

  Konishi, Keita ^a   Yoh, Kanji ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; BAND GAPS; BAR SAMPLES; EPITAXIAL GRAPHENE; GRAPHENE GROWTH; LOW ENERGY ELECTRONS; LOW TEMPERATURES; ON/OFF RATIO; SEMI-INSULATING; SINGLE LAYER; THERMAL DECOMPOSITIONS; TRANSPORT CHARACTERISTICS;

ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; GRAPHENE; PYROLYSIS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957979681     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.06.003     Document Type: Conference Paper

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