Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2753-2756

  Kumagai, N ^a   Ohkouchi, S ^a,b   Nakagawa, S ^a   Nomura, M ^a   Ota, Y ^a   Shirane, M ^a,b   Igarashi, Y ^a,b   Yorozu, S ^a,b   Iwamoto, S ^a,c   Arakawa, Y ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b NEC CORPORATION   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Indium arsenide; Molecular beam epitaxy; Photoluminescence; Self assembled quantum dot; Single photon emitters

Indexed keywords

CAPPING LAYER; EXCITONIC STATE; GAAS; HIGH TEMPERATURE; INAS QUANTUM DOTS; INAS/GAAS; INITIAL CAPPING; INITIAL STAGES; ISOTROPIC SHAPE; LOW TEMPERATURES; PL PROPERTY; PL SPECTRA; QUANTUM DOT; SELF ASSEMBLED QUANTUM DOTS; SINGLE PHOTON EMITTERS;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; GROWTH TEMPERATURE; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; PHOTONS; QUANTUM OPTICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ARSENIDE;

EID: 77957976788     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.12.042     Document Type: Conference Paper

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