Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Brazilian Journal of Physics

Volumn 40, Issue 3, 2010, Pages 357-360

  Sarma, R ^a   Saikia, D ^a,b   Saikia, Puja ^b   Saikia, P K ^b   Baishya, B ^b  

^a JB College   (India)

^b DIBRUGARH UNIVERSITY   (India)

Author keywords

Low threshold voltage; Organic thin film transistors; Pentacene; Rare earth oxide Nd2O3; Two step deposition

Indexed keywords

EID: 77957969016     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: 10.1590/S0103-97332010000300019     Document Type: Article

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