-
1
-
-
33745491055
-
-
ITRS, Semiconductor Industry Association, San Jose, CA 95129, (2001)
-
ITRS, Semiconductor Industry Association, San Jose, CA 95129, (2001).
-
-
-
-
2
-
-
2442507891
-
Fermi pinning-induced thermal instability of metal-gate work functions
-
H. Y. Yu, Chi Ren, Yee-Chia Yeo, J. F. Kang, X. P. Wang, H. H. H. Ma, Ming-Fu Li, D. S. H. Chan, and D.-L. Kwong, "Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions", IEEE Electron Device Lett., pp. 337-339, (2004).
-
(2004)
IEEE Electron Device Lett.
, pp. 337-339
-
-
Yu, H.Y.1
Ren, C.2
Yeo, Y.-C.3
Kang, J.F.4
Wang, X.P.5
Ma, H.H.H.6
Li, M.-F.7
Chan, D.S.H.8
Kwong, D.-L.9
-
3
-
-
1642344561
-
2 gate stack
-
2 Gate Stack", IEEE Electron Device Lett., vol. 25, pp. 123-125, (2004).
-
(2004)
IEEE Electron Device Lett.
, vol.25
, pp. 123-125
-
-
Ren, C.1
Yu, H.Y.2
Kang, J.F.3
Hou, Y.T.4
Li, M.-F.5
Wang, W.D.6
Chan, D.S.H.7
Kwong, D.-L.8
-
4
-
-
0037115703
-
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
-
Y. C. Yeo, T.-J. King, and C. Hu, "Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology", J. Appl. Phys., vol. 92, pp. 7266-7271, (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 7266-7271
-
-
Yeo, Y.C.1
King, T.-J.2
Hu, C.3
-
5
-
-
0019045150
-
2 interface
-
2 interface." J. Appl. Phys., vol. 51, pp. 4269-4281, (1980).
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 4269-4281
-
-
Hickmott, T.W.1
-
8
-
-
23944510634
-
Workfunction tuning using various impurities for fully silicided NiSi Gate
-
K. Sano, M. Hino, N. Ooishi and K. Shibahara, "Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate" Jap. J. Appl. Phys. Vol. 44, No. 6A, pp. 3774-3777, (2005).
-
(2005)
Jap. J. Appl. Phys.
, vol.44
, Issue.6 A
, pp. 3774-3777
-
-
Sano, K.1
Hino, M.2
Ooishi, N.3
Shibahara, K.4
-
9
-
-
0034790245
-
Metal gate work function adjustment for future CMOS technology
-
Q.Lu, R.Lin, P.Ranade, T.J.King, C.Hu," Metal Gate Work Function Adjustment for Future CMOS Technology " VLSI Technology Symposium, pp. 45-46, (2001).
-
(2001)
VLSI Technology Symposium
, pp. 45-46
-
-
Lu, Q.1
Lin, R.2
Ranade, P.3
King, T.J.4
Hu, C.5
-
13
-
-
33846425064
-
Estimation of fixed charge densities in Hafnium silicate gate dielectrics
-
submitted to
-
V.S. Kaushik, B.J. O'Sullivan, G. Pourtois, N. Van Hoornick, A. Delabie, S. Van Elshocht, W. Deweerd, T. Schram, L. Pantisano, E. Rohr, L-Å.Ragnarsson, S. De Gendt, M. Heyns, "Estimation of fixed charge densities in Hafnium silicate gate dielectrics", submitted to IEEE Trans. Electron Devices.
-
IEEE Trans. Electron Devices
-
-
Kaushik, V.S.1
O'Sullivan, B.J.2
Pourtois, G.3
Van Hoornick, N.4
Delabie, A.5
Van Elshocht, S.6
Deweerd, W.7
Schram, T.8
Pantisano, L.9
Rohr, E.10
Ragnarsson, L.-Å.11
De Gendt, S.12
Heyns, M.13
|