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Volumn 2, Issue 1, 2006, Pages 49-60

Effective work function modulation by as implantation in metal gate stacks

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; FUNCTION EVALUATION; ION IMPLANTATION; METAL ANALYSIS; VOLTAGE CONTROL;

EID: 33745485663     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (13)
  • 1
    • 33745491055 scopus 로고    scopus 로고
    • ITRS, Semiconductor Industry Association, San Jose, CA 95129, (2001)
    • ITRS, Semiconductor Industry Association, San Jose, CA 95129, (2001).
  • 4
    • 0037115703 scopus 로고    scopus 로고
    • Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
    • Y. C. Yeo, T.-J. King, and C. Hu, "Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology", J. Appl. Phys., vol. 92, pp. 7266-7271, (2002).
    • (2002) J. Appl. Phys. , vol.92 , pp. 7266-7271
    • Yeo, Y.C.1    King, T.-J.2    Hu, C.3
  • 5
  • 8
    • 23944510634 scopus 로고    scopus 로고
    • Workfunction tuning using various impurities for fully silicided NiSi Gate
    • K. Sano, M. Hino, N. Ooishi and K. Shibahara, "Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate" Jap. J. Appl. Phys. Vol. 44, No. 6A, pp. 3774-3777, (2005).
    • (2005) Jap. J. Appl. Phys. , vol.44 , Issue.6 A , pp. 3774-3777
    • Sano, K.1    Hino, M.2    Ooishi, N.3    Shibahara, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.