A review on the reliability of GaN-based laser diodes

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 1-6

  Trivellin, Nicola ^a   Meneghini, Matteo ^a   Zanoni, Enrico ^a   Orita, Kenji ^b   Yuri, Masaaki ^b   Tanaka, Tsuyoshi ^b   Ueda, Daisuke ^b   Meneghesso, Gaudenzio ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Degradation; Gallium nitride; Laser diode; Non raditive lifetime; Reliability

Indexed keywords

ACCELERATING FACTORS; AGEING TREATMENTS; BLU-RAY; DEGRADATION RATE; DRIVING CONDITIONS; GAN-BASED LASER DIODES; INGAN LASER DIODES; LASER DIODE; LINEAR CORRELATION; NON RADITIVE LIFETIME; NON-RADIATIVE LIFETIMES; ON CURRENTS; OPTICAL FIELD; PANASONIC; PHYSICAL MECHANISM; SLOPE EFFICIENCIES; STRESS CURRENT; STRESS TEMPERATURE; THERMAL STORAGE; THRESHOLD CURRENTS;

DEGRADATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT STORAGE; QUALITY ASSURANCE; SEMICONDUCTOR LASERS;

RELIABILITY ANALYSIS;

EID: 77957901037     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488866     Document Type: Conference Paper

References (10)

1. S. Nakamura et al. InGaN-based multi-quantum-well structure laser diodes Jpn. J. Appl. Phys. 1996; 35, L74-76.
2. O. H. Nam, K. H. Ha, J. S. Kwak, S. N. Lee, K. K. Choi, T. H. Chang, et al. Characteristics of GaN-based laser diodes for post-DVD applications phys. stat. sol. (a) 2004; 201, No. 12 2717-20.
3. C. van Opdorp, Method for determining effective nonradiative lifetime and leakage losses in double-heterostructure lasers, J. Appl. Phys. 1981; Vol. 52, pp. 3827.
4. Y. Xi and E. F. Schubert, Junction-temperature measurement in GaN ultraviolet light emitting diodes using diode forward voltage method, Appl. Phys. Lett. 2004; vol. 85, pp. 2163-5.
5. R. Olshansky, J. Manning and W. Powazinik, Measurement of Radiative and Nonradiative Recombination Rates in InGaAsP and AIGaAs Light Sources IEEE Journal of Quantum Electronics, 1984; Vol. Qe-20, No. 8.
6. L. Marona, P. Wisniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, et al., Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals, Appl. Phys. Lett. 2006; vol. 88, pp. 201111-3.
7. S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, Dislocation related issues in the degradation of GaN-based laser diodes, IEEE Journal of Selected Topics in Quantum Electronics 2004; vol. 10, no. 6, pp. 1277-86.
8. M. Meneghini, G. Meneghesso, N. Trivellin, E. Zanoni, K. Orita, M. Yuri, and D. Ueda, Extensive analysis of the degradation of Blu-Ray laser diodes, IEEE Electron Device Letters 2008; vol. 9, no. 6, pp. 578-81.
9. S. Nakamura, InGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours, Proc. SPIE 1998vol. 3283 (2), pp. 2-13.
10. M. Kneissl, D. P. Bour, L. Romano, C. G. Van de Walle, J. E. Northrup, W. S. Wong, et al., Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates, Appl. Phys. Lett. Vol. 77, 2000 No. 13, pp. 1931-3.