Effect of Al concentration in grain and grain boundary region of Al-doped ZnO films: A dielectric approach

Journal of Physics D: Applied Physics

Volumn 41, Issue 2, 2008, Pages

  Mandal, S ^a   Mullick, H ^a   Majumdar, S ^a   Dhar, A ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ENERGY GAP; GRAIN BOUNDARIES; SUBSTRATES; ZINC OXIDE;

DOPING CONCENTRATION; GRAIN BOUNDARY SCATTERING; PYREX GLASS SUBSTRATES;

THIN FILMS;

EID: 38049089366     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/2/025307     Document Type: Article

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