Electrical characteristics of PbSe nanoparticle/Si heterojunctions

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 10, 2009, Pages 5953-5957

  Bhardwaj, A ^a   Kar, J P ^b   Thakur, O P ^c   Srivastava, P ^a   Sehgal, H K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b Yonsei University   (South Korea)

^c SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Chemical bath deposition; Grain boundaries; Heterojunctions; I V and C V characteristics; Metal insulator semiconductor (MIS) structure; PbSe nanoparticles

Indexed keywords

AVERAGE GRAIN SIZE; C-V CHARACTERISTIC; CHEMICAL BATH DEPOSITION; CHEMICAL BATH DEPOSITION METHODS; COLE-COLE PLOTS; ELECTRICAL CHARACTERISTIC; FREQUENCY DEPENDENCE; GRAIN SIZE; I-V AND C-V CHARACTERISTICS; IV CHARACTERISTICS; METAL INSULATOR SEMICONDUCTOR (MIS) STRUCTURE; METAL-INSULATOR-SEMICONDUCTORS; NANOPARTICLE FILMS; NANOPARTICLE SIZES; PBSE NANOPARTICLES; RECTIFYING BEHAVIORS; REVERSE BIAS; SPACE CHARGE POLARIZATION;

DISTILLATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOPARTICLES; SEMICONDUCTOR METAL BOUNDARIES; SWITCHING CIRCUITS; VANADIUM;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 70350324470     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1254     Document Type: Article

References (18)

1. H. Zogg, S. Blunier, A. Fach, C. Maissen, and P. Muller, Phys. Rev. B. 50, 10801 (1994).
2. O. Dos Santos, V. Mathet, C. Fau, S. Charar, and M. Averous, Solid State Electronics 39, 813 (1996).
3. K. K. Nanda and S. N. Sahu, Appl. Phys. Lett. 79, 2743 (2001).
4. J. P. Kar, G. Bose, and S. Tuli, Scripta Materials 54, 1755 (2006).
5. S.-Y. Chung, S.-I. Lee, J.-H. Choi, and S.-Y. Choi, Appl. Phys. Lett. 89, 191907 (2006).
6. J. R. Jurado, M. T. Colomer, and J. R. Frade, Solid State Ionics 143, 251 (2001).
7. D. C. Sinclair and A. R. West, J. Appl. Phys. 66, 3850 (1998).
8. A. Bhardwaj, V. R. Balakrishnan, P. Srivastava, and H. K. Sehgal, Semicond. Sci. Technol. 23, 095020 (2008).
9. S. Gorer, A. Albu-Yaron, and G. Hodes, Chem. Mater. 7, 1243 (1995).
10. A. Bhardwaj, P. Srivastava, and H. K. Sehgal, J. Electrochem. Soc. 154, K83 (2007).
11. P. P. Hankare, S. D. Delekar, V. M. Bhuse, K. M. Garadkar, S. D. Sabane, and L. V. Gavali, Mater. Chem. Phys. 82, 505 (2003).
12. A. Bhardwaj, E. Varadarajan, P. Srivastava, and H. K. Sehgal, Solid State Commun. 146, 53 (2008).
13. N. Al-Dahoudi and M. A. Aegerter, Thin Solid Films 502, 193 (2006).
14. B. K. Patel, K. K. Nanda, and S. N. Saho, J. Appl. Phys. 85, 3666 (1999).
15. S. Lanfredi and A. C. M. Rodrigues, J. Appl. Phys. 86, 2215 (1999).
16. R. L. Anderson, Solid State Electronics 5, 341 (1962).
17. R. K. Joshi and H. K. Sehgal, Nanotechnology 15, 127 (2004).
18. S. M. Rajab, I. C. Oliveira, M. Massi, H. S. Maciel, S. G. Santos Filho, and R. D. Mansano, Thin Solid Films 515, 170 (2006).