Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering

Journal of Semiconductors

Volumn 31, Issue 9, 2010, Pages

  Xiaoli, Yang ^a   Nuofu, Chen ^b,c   Zhigang, Yin ^a   Xingwang, Zhang ^a   Yang, Li ^a   Jingbi, You ^a   Yu, Wang ^a   Jingjing, Dong ^a   Min, Cui ^a   Yun, Gao ^a   Tianmao, Huang ^a   Xiaofeng, Chen ^a   Yanshuo, Wang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NORTH CHINA ELECTRIC POWER UNIVERSITY   (China)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

Magnetron sputtering; Photoluminescence; Surface morphology; ZnO

Indexed keywords

AFM; C-AXIS ORIENTATIONS; CRYSTALLINE QUALITY; GAN/SAPPHIRE; GAS AMBIENTS; GROWTH MODES; PHOTOLUMINESCENCE SPECTRUM; PL MEASUREMENTS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-POWER; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; ULTRAVIOLET EMISSION; UV INTENSITY; WURTZITES; XRD; ZNO; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; MAGNETRON SPUTTERING; METALLIC FILMS; MORPHOLOGY; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOLUMINESCENCE; SURFACE MORPHOLOGY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE; ZINC SULFIDE;

SUBSTRATES;

EID: 77957857558     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/9/093001     Document Type: Article

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