Low-temperature Au-Si wafer bonding

Journal of Micromechanics and Microengineering

Volumn 20, Issue 9, 2010, Pages

  Jing, Errong ^a,b   Xiong, Bin ^a   Wang, Yuelin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOND QUALITY; BOND QUALITY TEST; BONDING INTERFACES; BONDING STRUCTURE; CRYSTALLINE SI; INTERFACIAL MICROSTRUCTURE; LOW TEMPERATURES; NATIVE OXIDES; NONUNIFORMITY; SI PRECIPITATES; SI SURFACES; SI WAFER; SURFACE ENERGIES;

ANISOTROPY; DISSOLUTION; GOLD; GOLD COATINGS; MICROSTRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; SHEAR STRENGTH; SILICON; SILICON WAFERS; SURFACE CHEMISTRY; TITANIUM;

WAFER BONDING;

EID: 77957843416     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/9/095014     Document Type: Article

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