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Volumn , Issue , 2010, Pages

A content-aware block placement algorithm for reducing PRAM storage bit writes

Author keywords

[No Author keywords available]

Indexed keywords

CRYPTOGRAPHY; FLASH MEMORY; PHASE CHANGE MEMORY;

EID: 77957824556     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MSST.2010.5496996     Document Type: Conference Paper
Times cited : (14)

References (11)
  • 1
    • 55449115308 scopus 로고    scopus 로고
    • Storage-class memory: The next storage system technology
    • R. F. Freitas and W. W. Wilcke, "Storage-class memory: The next storage system technology," IBM Journal of Research and Development, vol. 52, no. 4/5, pp. 439-447, 2008.
    • (2008) IBM Journal of Research and Development , vol.52 , Issue.4-5 , pp. 439-447
    • Freitas, R.F.1    Wilcke, W.W.2
  • 2
    • 55449106208 scopus 로고    scopus 로고
    • Phase-change random access memory: A scalable technology
    • S. Raoux et al., "Phase-change random access memory: A scalable technology," IBM Journal of Research and Development, vol. 52, no. 4/5, pp. 465-479, 2008.
    • (2008) IBM Journal of Research and Development , vol.52 , Issue.4-5 , pp. 465-479
    • Raoux, S.1
  • 7
    • 77957832466 scopus 로고    scopus 로고
    • NAND flash 101: An introduction to NAND flash and how to design it in to your next product
    • Micron Technology, Nov.
    • Micron Technology, "NAND flash 101: An introduction to NAND flash and how to design it in to your next product," Micron Technical Note TN-29-19, Nov. 2006.
    • (2006) Micron Technical Note TN-29-19


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.