Performance of amorphous diamond RF MEMS capacitive switch

Electronics Letters

Volumn 40, Issue 1, 2004, Pages 43-44

  Webster, J R ^a   Dyck, C W ^a   Sullivan, J P ^a   Friedmann, T A ^a   Carton, A J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITANCE; DIAMONDS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTROSTATICS; ENERGY DISSIPATION; LEAKAGE CURRENTS; SWITCHING; VOLTAGE CONTROL;

RADIO FREQUENCIES; VOLTAGE STRESSES;

MICROELECTROMECHANICAL DEVICES;

EID: 0347760430     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040034     Document Type: Article

References (5)

1. Rebeiz, G.M., and Muldavin, J.B.: 'RF MEMS switches and switch circuits', IEEE Microw. Mag., 2001, 2, (4), pp. 59-71
2. Goldsmith, C., et al.: 'Lifetime characterization of capacitive RF MEMS switches', IEEE MTT-S Int. Microw. Symp. Dig., 2001, 1, pp. 227-230
3. Reid, J.R., and Webster, R.T.: 'Measurements of charging in capacitive microelectromechanical switches', Electron. Lett., 2002, 38, (24), pp. 1544-1545
4. Hoivik, N., et al.; 'Atomic layer deposition (ALD) technology for reliable RF MEMS', IEEE MTT-S Int. Microw. Symp. Dig., 2002, 2, pp. 1229-1232
5. Sullivan, J.P., Friedmann, T.A., and Hjort, K.: 'Diamond and amorphous carbon MEMS', MRS Bull., 2001, 26, (4), pp. 309-311