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1
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48649087261
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Sub 50 nm InP HEMT device with Fmax greater than i THz
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Dec.
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R. Lai, X.B. Mei, W.R. Deal, W. Yoshida, YM. Kim, P.H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, A. Fung, "sub 50 nm InP HEMT device with Fmax greater than I THz," IEEE 2007 IEDM Conf. Dig., pp. 609-611, Dec. 2007.
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(2007)
IEEE 2007 IEDM Conf. Dig.
, pp. 609-611
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Lai, R.1
Mei, X.B.2
Deal, W.R.3
Yoshida, W.4
Kim, Y.M.5
Liu, P.H.6
Lee, J.7
Uyeda, J.8
Radisic, V.9
Lange, M.10
Gaier, T.11
Samoska, L.12
Fung, A.13
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2
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50249105796
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High-Speed InP HBT technology for advanced mixed-signal and digital applications
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C. Monier, D. Scott, M. D'Amore, B. Chan, L. Dang, A. Cavus, E. Kaneshiro, P. Nam, K. Sato, N. Cohen, S. Lin, K. Luo, J. Wang, B. Oyama, A. Gutierrez, "High-Speed InP HBT technology for advanced mixed-signal and digital applications", IEEE IEDM Digest, pp. 671-674 (2007).
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(2007)
IEEE IEDM Digest
, pp. 671-674
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Monier, C.1
Scott, D.2
D'Amore, M.3
Chan, B.4
Dang, L.5
Cavus, A.6
Kaneshiro, E.7
Nam, P.8
Sato, K.9
Cohen, N.10
Lin, S.11
Luo, K.12
Wang, J.13
Oyama, B.14
Gutierrez, A.15
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3
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54049148266
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An ultrawideband 7-bit 5-Gsps ADC implemented in submicron InP HBT technology
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B. Chan, B. Oyama, C. Monier, A. Gutierrez-Aitken, "An ultrawideband 7-bit 5-Gsps ADC implemented in submicron InP HBT technology", IEEE Journal oj Solid-State Circuits V43 (10), pp. 2187-2193 (2008).
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(2008)
IEEE Journal Oj Solid-state Circuits
, vol.V43
, Issue.10
, pp. 2187-2193
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-
Chan, B.1
Oyama, B.2
Monier, C.3
Gutierrez-Aitken, A.4
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4
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78650081872
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Demonstration of a 0.48 THz amplifier module using InP HEMT transistors
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accepted for publication in the
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W.R. Deal, XB. Mei, V. Radisic, K. Leong, S. Sarkozy, B. Gorospe, J. Lee, P.H. Liu, W. Yoshida, J. Zhou, M. Lange, J. Uyeda, R. Lai, "Demonstration of a 0.48 THz amplifier module using InP HEMT transistors", accepted for publication in the IEEE MWCL.
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IEEE MWCL
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-
Deal, W.R.1
Mei, X.B.2
Radisic, V.3
Leong, K.4
Sarkozy, S.5
Gorospe, B.6
Lee, J.7
Liu, P.H.8
Yoshida, W.9
Zhou, J.10
Lange, M.11
Uyeda, J.12
Lai, R.13
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5
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77957810114
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-
http://www.darpa.millmto/programs/thzlindex.html
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-
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6
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47349108884
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Demonstration of a S-MMIC LNA with 16-dB gain at 340-GHz
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Oct.
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W.R. Deal, X.B. Mei, V. Radisic, W. Yoshida, P.H. Liu, J. Uyeda, Barsky, T. Gaier, A. Fung, R. Lai, "Demonstration of a S-MMIC LNA with 16-dB gain at 340-GHz," IEEE 2007 CSIC Conf Dig., pp. 1-4, Oct. 2007.
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(2007)
IEEE 2007 CSIC Conf Dig.
, pp. 1-4
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Deal, W.R.1
Mei, X.B.2
Radisic, V.3
Yoshida, W.4
Liu, P.H.5
Uyeda, J.6
Gaier, B.T.7
Fung, A.8
Lai, R.9
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7
-
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34748814405
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Metamorphic H-band low-noise amplifier MMICs
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June
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A. Tessman, A. Leuther, H. Massier, W. Bronner, M. Schlechtweg, and G. Weimann, "Metamorphic H-band low-noise amplifier MMICs," in 2007 IEEE MTT-S International Microwave Symposium Digest, June 2007, pp. 353-356.
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(2007)
2007 IEEE MTT-S International Microwave Symposium Digest
, pp. 353-356
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Tessman, A.1
Leuther, A.2
Massier, H.3
Bronner, W.4
Schlechtweg, M.5
Weimann, G.6
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8
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77954659478
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A 10 mW submillimeter wave solid state power amplifier module
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submitted to
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V. Radisic, W.R. Deal, K.M.K.H. Leong, X. B. Mei, W. Yoshida, P.-H. Liu, J. Uyeda, A. Fung, L. Samoska, T. Gaier, R. Lai, "A 10 mW submillimeter wave solid state power amplifier module," submitted to IEEE Trans. Microwave Theory Tech.
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IEEE Trans. Microwave Theory Tech
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Radisic, V.1
Deal, W.R.2
Leong, K.M.K.H.3
Mei, X.B.4
Yoshida, W.5
Liu, P.-H.6
Uyeda, J.7
Fung, A.8
Samoska, L.9
Gaier, T.10
Lai, R.11
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9
-
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33847770325
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Demonstration of sub-millimeter wave fundamental oscillators using 35-nm InP HEMT technology
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DOI 10.1109/LMWC.2006.890495
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V. Radisic, X.B. Mei, W.R. Deal. W. Yoshida, P.H. Liu, J. Uyeda, M. Barsky, L. Samoska, A. Fung, T. Gaier and R. Lai, "Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology", IEEE Microwave and Wireless Components Letters, vol.17, no.13, pp. 223-225, March 2007. (Pubitemid 46393358)
-
(2007)
IEEE Microwave and Wireless Components Letters
, vol.17
, Issue.3
, pp. 223-225
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-
Radisic, V.1
Mei, X.B.2
Deal, W.R.3
Yoshida, W.4
Liu, P.H.5
Uyeda, J.6
Barsky, M.7
Samoska, L.8
Fung, A.9
Gaier, T.10
Lai, R.11
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10
-
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34247567224
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Demonstration of a 270-GHz MMIC Amplifier using 35-nm InP HEMT Technology
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May
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W.R. Deal, X.B. Mei, V. Radisic, W. Yoshida, P.H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, R. Lai, "Demonstration of a 270-GHz MMIC Amplifier using 35-nm InP HEMT Technology", IEEE Microwave and Components Letters, May, 2007.
-
(2007)
IEEE Microwave and Components Letters
-
-
Deal, W.R.1
Mei, X.B.2
Radisic, V.3
Yoshida, W.4
Liu, P.H.5
Uyeda, J.6
Barsky, M.7
Gaier, T.8
Fung, A.9
Samoska, L.10
Lai, R.11
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11
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34547432721
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Measurement of a 270 GHz low noise amplifier with 7.5 dB noise figure
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July
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T. Gaier, L. Samoska, A. Fung, W.R. Deal, V. Radisic, X.B. Mei, W. Yoshida, P.H. Liu, J. Uyeda, M, Barsky, R. Lai, "Measurement of a 270 GHz low noise amplifier with 7.5 dB noise figure," IEEE Microwave and Components Letters, vol.17, no.7, pp. 546-548, July 2007.
-
(2007)
IEEE Microwave and Components Letters
, vol.17
, Issue.7
, pp. 546-548
-
-
Gaier, T.1
Samoska, L.2
Fung, A.3
Deal, W.R.4
Radisic, V.5
Mei, X.B.6
Yoshida, W.7
Liu, P.H.8
Uyeda, M.J.9
Lai, B.R.10
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12
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0041779682
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G-band (I40-220-GHz) InP-based HBT amplifiers
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Sept.
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M. Urteaga, D. Scott, S. Krishnan, Y Wei, M. Dahlstrom, Z. Griffith, N. Parthasarathy, and M. Rodwell, "G-band (I40-220-GHz) InP-based HBT amplifiers," IEEE Journal oJ Solid-State Circuits, vol.38, no.9, Sept. 2003, pp. 1451-1456
-
(2003)
IEEE Journal OJ Solid-State Circuits
, vol.38
, Issue.9
, pp. 1451-1456
-
-
Urteaga, M.1
Scott, D.2
Krishnan, S.3
Wei, Y.4
Dahlstrom, M.5
Griffith, Z.6
Parthasarathy, N.7
Rodwell, M.8
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13
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36749103786
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Demonstration of a 311-GHz fundamental oscillator using InP HBT technology
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V. Radisic, D. Sawdai, D. Scott, W. R. Deal, L. Dang, D. Li, J. Chen, A. Fung, L. Samoska, T. Gaier, R. Lai, "Demonstration of a 311-GHz fundamental oscillator using InP HBT technology," IEEE Trans. On Micr. Theory and Techn., vol.55, no.11, 2007, pp. 2329-2335.
-
(2007)
IEEE Trans. on Micr. Theory and Techn.
, vol.55
, Issue.11
, pp. 2329-2335
-
-
Radisic, V.1
Sawdai, D.2
Scott, D.3
Deal, W.R.4
Dang, L.5
Li, D.6
Chen, J.7
Fung, A.8
Samoska, L.9
Gaier, T.10
Lai, R.11
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14
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57349182557
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250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz
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June
-
J. Hacker, M. Urteaga, D. Mensa, R. Pierson, M. Jones, Z. Griffith, M. Rodwell, "250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz, IEEE 2008 MTT-S IMS Digest, June 2008, pp. 403-406.
-
(2008)
IEEE 2008 MTT-S IMS Digest
, pp. 403-406
-
-
Hacker, J.1
Urteaga, M.2
Mensa, D.3
Pierson, R.4
Jones, M.5
Griffith, Z.6
Rodwell, M.7
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15
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41649087635
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Demonstration of 184 and 255-GHz amplifiers using InP HBT technology
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April
-
V. Radisic, D. Sawdai, D. Scott, W.R. Deal, L. Dang, D. Li, A. Cavus, A. Fung, L. Samoska, R. To, T. Gaier, R. Lai, "Demonstration of 184 and 255-GHz amplifiers using InP HBT technology," IEEE MW CL,vol.18, no.4" April 2008 pp. 281-283.
-
(2008)
IEEE MWCL
, vol.18
, Issue.4
, pp. 281-283
-
-
Radisic, V.1
Sawdai, D.2
Scott, D.3
Deal, W.R.4
Dang, L.5
Li, D.6
Cavus, A.7
Fung, A.8
Samoska, L.9
To, R.10
Gaier, T.11
Lai, R.12
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