Demonstration of 184 and 255-GHz amplifiers using inp hbt technology

IEEE Microwave and Wireless Components Letters

Volumn 18, Issue 4, 2008, Pages 281-283

  Radisic, Vesna ^a,b   Sawdai, Donald ^a,b   Scott, Dennis ^a,b   Deal, William R ^a,b   Dang, Linh ^b   Li, Danny ^b   Cavus, Abdullah ^b   Fung, Andy ^c   Samoska, Lorene ^a,c   To, Richard ^b   Gaier, Todd ^c   Lai, Richard ^a,b  

^a IEEE

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Amplifier; Heterojunction bipolar transistor (HBT); MM Wave; Monolithic microwave integrated circuit (MMIC); Sub millimeter wave

Indexed keywords

COMPUTER SIMULATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SUBMILLIMETER WAVES; WSI CIRCUITS;

SINGLE-EMITTER; SINGLE-STAGE HETEROJUNCTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 41649087635     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2008.918952     Document Type: Article

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